Method and device to monitor integrated temperature in a heat cy

Details Method and device to monitor integrated temperature in a heat cy Method and device to monitor integrated temperature in a heat cy

1996-08-23

1999-05-25

Picardat, Kevin M.

Semiconductor device manufacturing: process

With measuring or testing

438 54, 3241581, H01L 2166

Patent

active

059077638

ABSTRACT:
A method and device to monitor integrated temperature in a heat cycle process is disclosed. A monitor wafer, according to one embodiment, comprises a substrate, typically a silicon wafer, having films of two conductive materials of selected electrical resistances, sequentially deposited thereon. Suitable conductive materials react with each other in the presence of heat to yield a layer of a third, non-conductive or less conductive, material at the interface of the two conductive materials. The thickness of each of the films of the two conductive materials is selected such that the entire thickness is not consumed in the formation of the layer of a third material. Following the heat exposure, electrical resistance of the monitor wafer is determined and compared with the monitor wafer's selected pre-heat electrical resistance. The change in electrical resistance is then correlated to temperature by a thermocouple probe on a set of test wafers having the same blanket metal structure as the monitor wafer.

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