Method and device including transistor component having a...

Details Method and device including transistor component having a... Method and device including transistor component having a...

2009-10-26

2011-12-06

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S622000

Reexamination Certificate

active

08072028

ABSTRACT:
A transistor component and method of forming a transistor component. One embodiment provides a semiconductor arrangement including a semiconductor body having a at least one first trench, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor body by a field electrode dielectric. A dielectric layer is formed on the first field electrode in the at least one first trench, including depositing a dielectric material on a first side of the semiconductor body and on the field plate at a higher deposition rate than on sidewalls of the at least one first trench.

REFERENCES:
patent: 7186618 (2007-03-01), Polzl et al.
patent: 7859047 (2010-12-01), Kraft et al.
patent: 2005/0145936 (2005-07-01), Polzl et al.
patent: 2007/0037327 (2007-02-01), Herrick et al.
patent: 2008/0042172 (2008-02-01), Hirler et al.
patent: 2009/0218618 (2009-09-01), Blank
Infineon Data Sheet BSC057N03LS G for OptiMOS3 Power-MOSFET, Oct. 6, 2008, pp. 1-10.

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