Method and device for simulation, method and device for...

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Reexamination Certificate

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Reexamination Certificate

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07108580

ABSTRACT:
The preparation apparatus4determines the target distribution of the amount of polishing on the basis of the film thickness of the wafer2measured by the measuring apparatus3. The preparation apparatus4assumes a control program for the purpose of controlling the polishing apparatus1, and predicts the distribution of the amount of polishing that is obtained after the wafer2is polished by the polishing apparatus1in accordance with the assumed control program. In this case, the amount of polishing in individual partial regions of the polished surface of the wafer2is predicted using an indicator that indicates the height distribution of the polishing surface of the polishing pad14(when no pressure is applied to this polishing pad) as one parameter. The preparation apparatus4judges the acceptability of the assumed control program by comparing the predicted distribution of the amount of polishing and the target distribution of the amount of polishing. The polishing apparatus1polishes the wafer2in accordance with a control program that has been judged to be acceptable. As a result, the desired film thickness distribution on the side of the polished surface of the object of polishing can be simulated with good precision.

REFERENCES:
patent: 5599423 (1997-02-01), Parker et al.
patent: 2001/0039462 (2001-11-01), Mendez et al.
patent: 2001/0044257 (2001-11-01), Southwick
patent: 2002/0076933 (2002-06-01), Kawamura et al.
patent: 2003/0022596 (2003-01-01), Meyer
patent: 2003/0139122 (2003-07-01), Lawing
patent: 6-315849 (1994-11-01), None
patent: 10-296628 (1998-11-01), None
patent: 11-126765 (1999-05-01), None
patent: 11-186205 (1999-07-01), None
patent: 2001-219366 (2001-08-01), None
patent: 2002-140655 (2002-05-01), None

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