Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-03-03
1995-09-19
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257378, 257467, H01L 2356, H01L 2966
Patent
active
054518067
ABSTRACT:
A temperature sensing insulated gate semiconductor device (10) and method of using the insulated the insulated gate semiconductor device (10) for sensing a surface temperature. A lateral PNP bipolar transistor (63) is connected to a drain conductor (58) of an insulated gate field effect transistor (56). The insulated gate field effect transistor (56) is turned on, thereby shorting a collector conductor (64) with a base conductor (62) to form a diode connected lateral PNP bipolar transistor (63). A forward voltage is measured across an emitter-base junction of the diode connected lateral PNP bipolar transistor (63). The surface temperature of the insulated gate semiconductor device (10) is derived using the diode equation in conjunction with the current (67) and the forward voltage drop.
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patent: 5100829 (1992-03-01), Fay et al.
patent: 5237481 (1993-08-01), Soo et al.
patent: 5304837 (1994-04-01), Hierold
patent: 5349336 (1994-09-01), Nishiura et al.
Dover Rennie William
Mintel William
Motorola Inc.
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