Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Patent
1995-03-10
1998-06-30
Niebling, John
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
374161, 356349, 1566261, G01R 3126, H01L 2166
Patent
active
057733163
ABSTRACT:
Pulsed laser beams are applied to an object to be measured. A first laser beam of a pulsed laser beam having a first wavelength which is oscillated immediately after the rise of the pulsed laser beam, and a second laser beam having a second wavelength which is oscillated thereafter are used. Based on a difference between an intensity of first interfered light of reflected light of the first laser beam or transmitted light thereof, and an intensity of reflected light of the second laser beam or transmitted light thereof, temperatures of the object to be measured, and whether the temperatures are on increase or on decrease are judged. The method and device can be realized by simple structures and can measure a direction of changes of the physical quantities.
REFERENCES:
patent: 5249865 (1993-10-01), Paranjpe et al.
patent: 5263776 (1993-11-01), Abraham
patent: 5322361 (1994-06-01), Cabib et al.
patent: 5467732 (1995-11-01), Donnelly, Jr. et al.
"Wavelength-Modulated Interferometric Thermometry for Improved Substrate Temperature Measurement", Saenger et al., Rev. Sci. Instrum., vol. 63, No. 8, Aug. 1992, pp. 3862-3868.
Fujimura Shuzo
Kikuchi Jun
Kurosaki Ryo
Serizawa Haruhiko
Bilodeau Thomas G.
Fujitsu Limited
Niebling John
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