Method and device for heat treatment

Details Method and device for heat treatment Method and device for heat treatment

2005-10-04

2005-10-04

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S663000, C438S715000, C438S795000

Reexamination Certificate

active

06951815

ABSTRACT:
After carrying an LCD substrate in a reaction container of a heat treatment unit, blowing a previously heated helium gas from a gas supply part, which opposes to the surface of the LCD substrate, over the entire surface of the LCD substrate. The temperature of the LCD substrate is raised by radiation heat of a heater and heat exchange with the helium gas. After performing CVD or annealing in the reaction container, cooling the LCD substrate by blowing a gas for heat exchange having a temperature about a room temperature from the gas supply part over the entire surface of the LCD substrate. Return the cooled LCD substrate to a carrier in the carrier chamber via a conveyance chamber.

REFERENCES:
patent: 6143083 (2000-11-01), Yonemitsu et al.
patent: 6291801 (2001-09-01), Guidotti et al.
patent: 6462310 (2002-10-01), Ratliff et al.
patent: 6497767 (2002-12-01), Okase et al.
patent: 1033743 (2000-09-01), None
patent: 10-22266 (1998-01-01), None
patent: 2000-323487 (2000-11-01), None
patent: 2001-133606 (2001-05-01), None

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