Method and device for growing pseudomorphic AlInAsSb on InAs

Details Method and device for growing pseudomorphic AlInAsSb on InAs Method and device for growing pseudomorphic AlInAsSb on InAs

2006-06-05

2009-10-06

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257S015000, C257SE29072

Reexamination Certificate

active

07598158

ABSTRACT:
A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.

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