Method and device for growing pseudomorphic AlInAsSb on InAs

Details Method and device for growing pseudomorphic AlInAsSb on InAs Method and device for growing pseudomorphic AlInAsSb on InAs

2011-06-28

2011-06-28

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S478000, C438S604000, C257SE29072, C257SE29089

Reexamination Certificate

active

07968435

ABSTRACT:
A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.

REFERENCES:
patent: 5780867 (1998-07-01), Fritz et al.
patent: 6404791 (2002-06-01), Yang
patent: 6813296 (2004-11-01), Goyal et al.
Chow, D.H., et al., “Structural and transport properties of InAs/AlSb superlattices,”Journal of Crystal Growth, 150 pp. 879-882 (1995).
Mathis, S.K., et al., “Lateral oxidation kinetics of AIAsSb and related alloys lattice matched to InP,”Journal of Applied Physics, vol. 89, pp. 2458-2464 (2001).
Obane, K., “Immiscibility Analysis for III-V Quaternary Solid Solutions,”NEC Res.&Develop., No. 72, pp. 1-11 (1984).
Turner, G.W., et al., “MBE growth of high-power InAsSb/InAIAsSb quantum-well diode lasers emitting at 3.5μm,”Journal of Crystal Growth, 175/176, pp. 825-832 (1998).
Washington, D., et al., “Al1-xInsAs1-ySby/GaSb heterojunctions and multilayers grown by molecular epitaxy for effective-mass superlattices,” Journal of Vac. Sci. Technol., B16, pp. 1385-1388 (1998).
Wilk, A., et al., “MBE growth of InAs/InAsSb/InAlAsSb “W” quantum well laser diodes emitting near 3μm”Journal of Crystal Growth, 227-228, pp. 586-590 (2001).
Kudo et al. “MBE growth of Si-doped InAlAsSb layers lattice-matched with InAs”, Journal of Crystal Growth 175/176; (1997), pp. 844-848.

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