Method and device for forming spacer structures for...

Details Method and device for forming spacer structures for... Method and device for forming spacer structures for...

2006-09-19

2006-09-19

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Insulative housing or support

C438S055000, C438S508000

Reexamination Certificate

active

07109066

ABSTRACT:
A method for forming a patterned silicon bearing material, e.g., silicon substrate. The method includes providing a silicon substrate, which has a surface region and a backside region. The method includes forming a plurality of recessed regions on the surface region. Each of the plurality of recessed regions has a border region. Preferably, the plurality of recessed regions forms a patterned surface region. The method includes bonding (e.g., hermetic bonding or on-hermetic seal) the patterned surface region to a handle surface region of a handle substrate, e.g., glass substrate. Each of the border regions, which protrude outwardly from the recessed regions, is bonded to the handle surface region, while each of the recessed regions remain free from attachment to any surface of the handle surface region. The method includes etching selected regions on the backside to remove a thickness of silicon substrate overlying each of the recessed regions. The method also includes releasing a thickness of material defined within the recessed region while maintaining each of the border regions bonded to the handle surface region to form a plurality of silicon structures bonded to the handle surface region.

REFERENCES:
patent: 5734156 (1998-03-01), Dahlin et al.
patent: 6808956 (2004-10-01), Cabuz et al.
patent: 2004/0161530 (2004-08-01), Stark
patent: 2005/0024745 (2005-02-01), Gasloli

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