Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-02-01
2005-02-01
Nguyen, Van Thu (Department: 2824)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S430000, C438S431000, C438S433000, C257S506000, C257S510000, C257S520000
Reexamination Certificate
active
06849520
ABSTRACT:
A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.
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Choi Si-Young
Kim Chul-Sung
Lee Byeong-Chan
Park Jung-Woo
Ryu Jong-Ryol
Lee & Sterba, P.C.
Nguyen Van Thu
Samsung Electronics Co,. Ltd.
Wilson Christian D.
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