Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1987-01-15
1988-07-26
Church, Craig E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
378 34, 378208, 378210, 2503581, 250363R, 2504421, 2504911, G01N 2318
Patent
active
047602651
ABSTRACT:
An inspecting method and device for inspecting an object or objects such as photomasks having a plurality of identical patterns, to detect defects of the patterns, wherein the object is placed such that the patterns lie in the same plane, and an inspection mask having a plurality of translucent apertures is placed such that the inspection mask is adjacent and parallel to the object. The inspection mask and the object are moved relative to each other whereby each aperture is positioned opposite to mutually corresponding portions of the patterns. The object and inspection mask are irradiated with rays of light emitted in a direction substantially normal to the plane of relative movements thereof. The rays of light transmitted through the apertures and the object are converted into electric signals, and the electric signals associated with the corresponding portions of the patterns are compared with each other, prior to obtaining the electric signals of all of the plurality of patterns. If the electric signals of the corresponding portions of the patterns differ from each other, these portions are determined to be defective.
REFERENCES:
patent: 3742229 (1973-06-01), Smith et al.
patent: 3843916 (1974-10-01), Trotel et al.
patent: 4260670 (1981-04-01), Burns
patent: 4335313 (1982-06-01), Krenzer et al.
patent: 4467211 (1984-08-01), Smith et al.
patent: 4559603 (1985-12-01), Yoshikawa
patent: 4613981 (1986-09-01), Siddall et al.
"Submicron Lithography" Author Unknown, published by Science forum in 1985, pp. 413-436, partial translation.
Hattori Shuzo
Iida Takahide
Miyake Hiroshi
Yoshida Akihiro
Church Craig E.
Freeman John C.
Hattori Shuzo
Kabushiki Kaisha Toyoda Jidoshokki Seisakusho
LandOfFree
Method and device for detecting defects of patterns in microelec does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and device for detecting defects of patterns in microelec, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and device for detecting defects of patterns in microelec will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-259375