Method and device for controlling internal power voltage,...

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Reexamination Certificate

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C365S233130

Reexamination Certificate

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07436730

ABSTRACT:
In an embodiment, a device controls an internal power voltage in a semiconductor device. The device uses internal and external power voltages during a power-up period, and includes a power-up flag signal generator and a control circuit. The power-up flag signal generator generates a power-up flag signal based on the external power voltage. The control circuit provides a first internal power voltage to a peripheral circuit of the semiconductor device. During power-up the first internal power voltage varies according to a level of the external power voltage in response to the power-up flag signal having a first logic level. Accordingly, an internal power voltage may have a linear power-up slope during the power-up period and an initialization failure of any latch circuits in the peripheral circuit may be avoided. Also, power consumption of the latch circuits is reduced.

REFERENCES:
patent: 5734281 (1998-03-01), Morishima et al.
patent: 6075741 (2000-06-01), Ma et al.
patent: 6691248 (2004-02-01), Nishijima et al.
patent: 2003/0156440 (2003-08-01), Hata et al.
patent: 2004/0046595 (2004-03-01), Ikehashi et al.
patent: 2004/0268278 (2004-12-01), Hoberman et al.
patent: 10-0226221 (1999-07-01), None
patent: 2003-0009141 (2003-01-01), None
English language abstract of the Korean Publication No. 2003-0009141.

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