Static information storage and retrieval – Powering
Reexamination Certificate
2005-06-15
2008-10-14
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Powering
C365S233130
Reexamination Certificate
active
07436730
ABSTRACT:
In an embodiment, a device controls an internal power voltage in a semiconductor device. The device uses internal and external power voltages during a power-up period, and includes a power-up flag signal generator and a control circuit. The power-up flag signal generator generates a power-up flag signal based on the external power voltage. The control circuit provides a first internal power voltage to a peripheral circuit of the semiconductor device. During power-up the first internal power voltage varies according to a level of the external power voltage in response to the power-up flag signal having a first logic level. Accordingly, an internal power voltage may have a linear power-up slope during the power-up period and an initialization failure of any latch circuits in the peripheral circuit may be avoided. Also, power consumption of the latch circuits is reduced.
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English language abstract of the Korean Publication No. 2003-0009141.
Le Thong Q
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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