Method and device for continuous cold plasma deposition of...

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Reexamination Certificate

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C204S192150, C204S192170, C204S298060, C204S298080, C204S298090, C204S298120, C204S298190, C204S298240, C427S523000, C427S531000, C427S571000, C427S576000, C427S587000, C427S593000, C118S718000, C118S719000, C118S7230VE, C118S726000

Reexamination Certificate

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10362585

ABSTRACT:
A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substrate with a source of metal vapor between them, made up of an electrode to form a plasma (6) with the substrate or a separate electrically conducting element as a counter-electrode. The deposition metal is introduced in the liquid state in a retention tank (8) and is maintained as a liquid at an essentially constant level during the formation of the metal layer on the substrate. An Independent claim is included for the device used to put this method of coating a substrate into service.

REFERENCES:
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patent: 5178743 (1993-01-01), Kumar
patent: 5415757 (1995-05-01), Szcyrbowski et al.
patent: 6432281 (2002-08-01), Vanden Brande et al.
patent: 0685571 (1995-12-01), None
patent: 0780486 (1997-06-01), None
patent: 0908924 (1999-04-01), None
patent: 11-189872 (1999-07-01), None
Patent Abstracts of Japan; Weight Monitoring System for Molten Material or Sublimating Material and Its Weight Control System; Matsushita Electronic Ind Co Ltd; JP 03274264, Dec. 5, 1991.
Patent Abstracts of Japan; Device for Controlling Molten Metal Level in Vacuum Evaporator; Nisshin Steel Co Ltd; JP 63199868, Aug. 18, 1988.

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