Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-09
2007-10-09
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S663000, C438S686000, C257SE21170, C257SE21021, C257SE21311, C257SE21324
Reexamination Certificate
active
10996144
ABSTRACT:
A method and a deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors using CO gas and a dilution gas. The method includes providing a substrate in a process chamber of a processing system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, diluting the process gas in the process chamber, and exposing the substrate to the diluted process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process. The deposition system contains a substrate holder configured for supporting and heating a substrate in a process chamber having a vapor distribution system, a precursor delivery system configured for forming a process gas containing a metal-carbonyl precursor vapor and a CO gas and for introducing the process gas to the vapor distribution system, a dilution gas source configured for adding a dilution gas to the process gas in the process chamber, and a controller configured for controlling the deposition system during exposure of the substrate to the diluted process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
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Nhu David
Tokyo Electron Limited
Wood Herron & Evans LLP
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