Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-20
2009-08-25
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C206S291000, C206S123000, C206S157000
Reexamination Certificate
active
07579274
ABSTRACT:
The object of the present invention is a method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices.According to the invention, this method comprises:providing an electrolytic copper bath containing, in solution in a solvent, a source of copper ions with a concentration of between 45 and 200 mM, preferably of between 45 and 100 mM and at least one copper complexing agent which is an aliphatic polyamine having 2 to 4 amine functions with a concentration of between 30 and 200 mM, preferably of between 60 and 200 mM; the copper/complexing agent(s) molar ratio being of between 0.2 and 2, preferably between 0.3 and 1.5;bringing said copper diffusion barrier layer of said substrate into contact with said electrolytic copper bath,applying an electrical bias to the substrate for a duration adjusted according to the thickness of copper to be electroplated,removing the substrate from said electrolytic copper bath.
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Gonzalez Jose
Monchoix Herve
Alchimer
Hamre Schumann Mueller & Larson P.C.
Parker John M
Smith Matthew
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