Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-10-22
1999-11-23
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
361790, 361737, 438122, H01L 2348
Patent
active
059905603
ABSTRACT:
An improved method and composition for achieving a kinetically-controlled solder bond is disclosed having particular application to the fabrication of hybrid integrated circuits and optical subassemblies. The method involves the use of a solder layer, a quenching layer, and a control layer disposed between the solder layer and quenching layer, in which the control layer is advantageously comprised of a thin film of platinum. Additionally, a barrier layer, also preferably comprised of a thin film of platinum, is disposed between the solder layer and the parts to be bonded to prevent the oxidation of solder materials during the soldering process or later storage of the soldered parts.
REFERENCES:
patent: 5559817 (1996-09-01), Derkits, Jr. et al.
Coult David Gerald
Derkits, Jr. Gustav Edward
Osenbach John William
Wong Yiu-Man
Brown Peter Toby
Lucent Technologies - Inc.
Potter Roy
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