Method and composition to improve a nitride/oxide wet...

Details Method and composition to improve a nitride/oxide wet... Method and composition to improve a nitride/oxide wet...

2006-01-17

2006-01-17

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S745000, C438S757000

Reexamination Certificate

active

06987064

ABSTRACT:
A method for wet etching a metal nitride containing layer overlying a silicon oxide containing layer in a semiconductor device or micro-electro-mechanical device manufacturing process including providing a substrate including a silicon oxide containing layer and an overlying exposed metal nitride containing layer; providing a wet etching solution including phosphoric acid and water; adding a silicon containing compound which undergoes a hydrolysis reaction in the wet etching solution; and, contacting the exposed metal nitride containing layer with the wet etching solution for a period of time to remove the metal nitride containing layer.

REFERENCES:
patent: 5470421 (1995-11-01), Nakada et al.
patent: 5658811 (1997-08-01), Kimura et al.
patent: 5786276 (1998-07-01), Brooks et al.
patent: 6001215 (1999-12-01), Ban

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