Method and composition for dry etching in semiconductor fabricat

Details Method and composition for dry etching in semiconductor fabricat Method and composition for dry etching in semiconductor fabricat

1997-12-19

2000-06-27

Gulakowski, Handy

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 69, 216 72, 216 75, H01L 21461

Patent

active

06080680&

ABSTRACT:
Methods and compositions for improving etch rate selectivity of photoresist to substrate material in a downstream microwave dry stripping process in the fabrication of semiconductor integrated (IC) circuits are provided. Significant improvement in selectivity is demonstrated with the addition of N.sub.2 to an etchant gas mixture of O.sub.2 and CF.sub.4.

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