Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-04-21
1996-02-20
Nguyen, Viet Q.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257318, 257328, 257368, 257350, 257379, 327208, 327199, 327224, G11C 1606
Patent
active
054931410
ABSTRACT:
The present programming method exploits the close dependence of tunneling current on the voltage drop across the tunnel oxide layer. A bootstrapped capacitor connected to the drain terminal of the transistor is employed. The charge state of the capacitor determines the bias of the tunnel oxide and is in turn determined by the charge state in the floating gate. Biasing by the bootstrapped capacitor is such as to permit passage of the tunneling current and, hence, a change in the threshold voltage of the transistor until the floating gate reaches the desired charge level, and to prevent passage of the tunneling current upon the transistor reaching the desired threshold. Programming is thus performed automatically and to a predetermined degree of accuracy, with no need for a special circuit for arresting the programming operation when the desired threshold is reached.
REFERENCES:
patent: 3972059 (1976-07-01), Distefano
patent: 4185319 (1980-01-01), Stewart
patent: 4616245 (1986-10-01), Topich et al.
patent: 5138576 (1992-08-01), Madurawe
patent: 5253196 (1993-10-01), Shimabukuro et al.
Patent Abstracts of Japan, vol. 5, No. 73 (P-61)(745) May 15, 1981 & JP-A-5619589.
Briozzo Luciano
Lanzoni Massimo
Ricco Bruno
Driscoll David M.
Morris James H.
Nguyen Viet Q.
SGS--Thomson Microelectronics S.r.l.
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