Method and circuit for substrate current induced hot e.sup.- inj

Static information storage and retrieval – Floating gate – Particular biasing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36518518, 36518521, G11C 1604

Patent

active

059128453

ABSTRACT:
A method for soft programming memory cells and floating gate memory device. During soft programming, a gate voltage is supplied to the control gate, a drain voltage it supplied to the drain, a well voltage is supplied to the well, and an active current limiter is coupled to the source. A circuit for soft programming supplies a gate voltage to the control gate, couples a constant current source to the drain, supplies a well voltage to the well, and supplies a source voltage to the source. The gate voltage may be approximately 2 V, the drain voltage may be approximately 4 V, and the well voltage may be approximately -2 V. According to another embodiment of the invention, the gate voltage is approximately 2 V lower than the drain voltage, and the well voltage is approximately 4 V lower than the gate voltage.

REFERENCES:
patent: 4875188 (1989-10-01), Jungroth
patent: 5042009 (1991-08-01), Kazerounian et al.
patent: 5233562 (1993-08-01), Ong et al.
patent: 5258949 (1993-11-01), Chang et al.
patent: 5349220 (1994-09-01), Hong
patent: 5399891 (1995-03-01), Yiu et al.
patent: 5406521 (1995-04-01), Hara
patent: 5414664 (1995-05-01), Lin et al.
patent: 5416738 (1995-05-01), Shrivastava
patent: 5467306 (1995-11-01), Kaya et al.
patent: 5487033 (1996-01-01), Keeney et al.
patent: 5508959 (1996-04-01), Lee et al.
patent: 5546340 (1996-08-01), Hu et al.
patent: 5554868 (1996-09-01), Hayashikoshi et al.
patent: 5561620 (1996-10-01), Chen et al.
patent: 5596530 (1997-01-01), Lin et al.
patent: 5615153 (1997-03-01), Yiu et al.
patent: 5642311 (1997-06-01), Cleveland et al.
patent: 5657271 (1997-08-01), Mori
patent: 5745410 (1998-04-01), Yiu et al.
Hu, C. et al., "Substrate-Current-Induced Hot Electron (SCIHE) injection: a new convergence scheme for flash memory", IEDM 95, IEEE (1995), pp. 283-286.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and circuit for substrate current induced hot e.sup.- inj does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and circuit for substrate current induced hot e.sup.- inj, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and circuit for substrate current induced hot e.sup.- inj will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-407042

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.