Method for flash EEPROM data writing

Details Method for flash EEPROM data writing Method for flash EEPROM data writing

1998-01-28

1999-06-15

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

36518533, G11C 1604

Patent

active

059128445

ABSTRACT:
Method for writing data to a NOR-type flash memory array including loading page data to a bit-latch buffer, programming cells to low threshold voltage V.sub.t, and programming cells to high V.sub.t. Programming cells to high V.sub.t by either: Channel Hot Electron Injection (CHEI) or Source Side Injection (SSI). CHEI releases the band-to-band induced hot hole damage while SSI further reduces the sector size to be the same as page size for NOR-type flash EEPROM memory.

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