Method and circuit for simultaneously programming memory cells

Static information storage and retrieval – Read/write circuit – Simultaneous operations

Reexamination Certificate

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C365S185030, C365S185240, C365S185330

Reexamination Certificate

active

11279663

ABSTRACT:
A method for simultaneously programming a pre-established number of memory cells includes setting an initial number of memory cells to be simultaneously programmed equal to the pre-established number, and subdividing the initial number of memory cells to be programmed into subsets of memory cells. A program operation for simultaneously programming all the memory cells of each subset of memory cells is executed by forcing a current through all the memory cells of each subset of memory cells. The current has a program voltage associated therewith. The program voltage is compared to a threshold voltage during execution of the program operation. The method further includes stopping execution of the program operation if the threshold voltage is surpassed, reducing the initial number of memory cells to be simultaneously programmed, and restarting from the subdividing.

REFERENCES:
patent: 6031760 (2000-02-01), Sakui et al.
patent: 7085167 (2006-08-01), Lee et al.
patent: 7136304 (2006-11-01), Cohen et al.
patent: 2004/0130946 (2004-07-01), Uribe et al.

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