Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2005-01-11
2005-01-11
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S145000
Reexamination Certificate
active
06842387
ABSTRACT:
Disclosed is a method and circuit for repairing a nonvolatile ferroelectric memory device that can control the redundancy operation according to a user's program setting. In the repairing method, fail addresses are stored in a plurality of redundancy coding cells of a redundancy coding section composed of a ferroelectric capacitor, a redundancy master cell and the redundancy coding cells, and if input addresses satisfy conditions encrypted by a user, a master signal is activated through the redundancy master cell by outputting to the redundancy coding section a set signal, a reset signal and a first group of control signals. If the input addresses correspond to the fail addresses stored in the redundancy coding cells, a second group of control signals are outputted by performing a logical operation of the master signal, and then a third group of control signals are outputted for inactivating normal input/output paths and activating redundancy input/output paths by operation of a redundancy control section which receives the second group of control signals as its inputs.
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Hoang Huan
Hynix / Semiconductor Inc.
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