Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2005-05-03
2005-05-03
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S189090, C365S177000
Reexamination Certificate
active
06888769
ABSTRACT:
The required refresh rate of a DRAM is reduced by biasing active digit lines to a slight positive voltage to reduce the sub threshold current leakage of access transistors in memory cells that are not being accessed. The slight positive voltage is provided by a voltage regulator circuit using one or more bipolar transistors fabricated in a well that electrically isolates the bipolar transistors from the remainder of the substrate. The voltage provided by the voltage regulator is preferably coupled to the access transistors by powering each of the n-sense amplifiers in the DRAM with the voltage from the voltage regulator.
REFERENCES:
patent: 4679172 (1987-07-01), Kirsch et al.
patent: 4984207 (1991-01-01), Tateno et al.
patent: 4994688 (1991-02-01), Horiguchi et al.
patent: 5257238 (1993-10-01), Lee et al.
patent: 5523713 (1996-06-01), Yukutake et al.
patent: 5526313 (1996-06-01), Etoh et al.
patent: 5539703 (1996-07-01), Manning
patent: 5798976 (1998-08-01), Arimoto
patent: 5869874 (1999-02-01), Manning
patent: 5880604 (1999-03-01), Kawahara et al.
patent: 5909630 (1999-06-01), Roberts et al.
patent: 5910924 (1999-06-01), Tanaka et al.
patent: 5999460 (1999-12-01), Oh
patent: 6159813 (2000-12-01), Ahmad et al.
patent: 6191448 (2001-02-01), Forbes et al.
patent: 6208575 (2001-03-01), Proebsting
patent: 6306727 (2001-10-01), Akram
patent: 6317357 (2001-11-01), Forbes
patent: RE37593 (2002-03-01), Etoh et al.
patent: 6373753 (2002-04-01), Proebsting
patent: 6410378 (2002-06-01), Gonzalez
patent: 6429065 (2002-08-01), Forbes
patent: 6456157 (2002-09-01), Forbes et al.
patent: 6462584 (2002-10-01), Proebsting
patent: 6468855 (2002-10-01), Leung et al.
patent: 6535435 (2003-03-01), Tanaka et al.
patent: 6556068 (2003-04-01), Forbes et al.
patent: 6636075 (2003-10-01), Nakayama et al.
patent: 6674672 (2004-01-01), Forbes et al.
patent: 6677658 (2004-01-01), Akram
Dorsey & Whitney LLP
Hoang Huan
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