Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2005-01-11
2005-01-11
Mai, Son (Department: 2818)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S185180, C365S226000, C327S538000
Reexamination Certificate
active
06842383
ABSTRACT:
According to some embodiments of the present invention, a non-volatile memory cell may be operated using a charge pump circuit. The charge pump circuit may be adapted to output a first and second voltage level, and the charge pump circuit may be connected to a first circuit segment, including a select transistor associated with the memory cell, through a switch. When the charge pump circuit is outputting power at the first voltage level, the switch may be conducting and the select transistor line may be charged. When the charge pump circuit is outputting power at the second voltage level, the switch may be opened and a second circuit segment, including a bit line associated with the memory cell, may be charged.
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Eisen Shai
Harush Avri
Shor Joseph S.
Eitan, Pearl, Latzer & Cohen Zedek LLP
Mai Son
Saifun Semiconductors Ltd.
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