Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-18
2000-12-19
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257402, H01L 2902
Patent
active
061630446
ABSTRACT:
An integrated circuit includes a substrate pump circuit developing an internal back-bias voltage on an output, and an external terminal adapted to receive an external back-bias voltage. A semiconductor substrate is coupled to the external terminal and to the output of the substrate pump circuit. The semiconductor substrate includes at least one transistor formed in the semiconductor substrate which has a first threshold voltage when the internal back-bias voltage is applied to the substrate. The at least one transistor has a second threshold voltage greater than the first threshold voltage when the external back-bias voltage is received on the external terminal.
Hardy David
Micro)n Technology, Inc.
LandOfFree
Method and circuit for lowering standby current in an integrated does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and circuit for lowering standby current in an integrated, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and circuit for lowering standby current in an integrated will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-272948