Method and circuit for driving word line of memory cell

Details Method and circuit for driving word line of memory cell Method and circuit for driving word line of memory cell

2007-10-19

2010-10-05

Dinh, Son (Department: 2824)

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

C365S203000, C365S189080

Reexamination Certificate

active

07808858

ABSTRACT:
A method and circuit are provided for driving a word line. The word line driving circuit includes first and second power drivers, a switching unit and a word line driver. The first power driver is driven to a boosting voltage level and the second power driver is driven to an internal power voltage level. The switching unit transfers a first output of the first power driver to the word line driver in response to a first switching signal and transfers a second output of the second power driver to the word line driver in response to a second switching signal. The word line driver alternately drives a word line to the first output and the second output transferred from the switching unit in response to a word line driving signal.

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