Method and arrangement for contacting terminals

Details Method and arrangement for contacting terminals Method and arrangement for contacting terminals

2007-11-16

2010-02-23

Fahmy, Wael (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S758000, C438S639000

Reexamination Certificate

active

07666783

ABSTRACT:
In a method of contacting terminals, a substrate having a first terminal and a second terminal is provided, a terminal surface of the first terminal being located at a shorter distance from a substrate surface than a surface of the second terminal. A first insulating layer, in which a contact via is formed for exposing the terminal surface of the first terminal, is formed on the substrate surface. The contact via is filled with a conductive material, and a second insulating layer is formed on the first insulating layer and on the contact via filled with the conductive material. Using an etching mask, a first recess for exposing the conductive material filling the contact via, and a second recess are etched through the second and first insulating layers for exposing the second terminal surface. A conductive material for producing first and second contact terminals is introduced into the first and second recesses. This is to achieve that the second terminal is contacted in the production of the second contact terminal.

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