Method and apparatus to reduce storage node disturbance in...

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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C365S149000

Reexamination Certificate

active

07133304

ABSTRACT:
Methods and ferroelectric devices are presented, in which pulses are selectively applied to ferroelectric memory cell wordlines to discharge cell storage node disturbances while the cell plateline and the associated bitline are held at substantially the same voltage.

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