Method and apparatus to reduce bias temperature instability...

Details Method and apparatus to reduce bias temperature instability... Method and apparatus to reduce bias temperature instability...

2006-03-07

2006-03-07

Tran, Michael (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S190000

Reexamination Certificate

active

07009905

ABSTRACT:
Methods and apparatus are disclosed that allow an electronic system implemented with field effect transistors (FETs) to reduce threshold voltage shifts caused by bias temperature instability (BTI). BTI caused VT shifts accumulate when an FET is in a particular voltage stress condition. Many storage elements in an electronic system store the same data for virtually the life of the system, resulting in significant BTI caused VT shifts in FETs in the storage elements. An embodiment of the invention ensures that a particular storage element is in a first state for a first portion of time the electronic system operates, during which data is stored in a storage element in a first phase, and that the particular storage element is in a second state for a second portion of time the electronic system operates, during which data is stored in the storage element in a second phase.

REFERENCES:
patent: 5295079 (1994-03-01), Wong et al.
patent: 6400629 (2002-06-01), Barth, Jr. et al.
patent: 6760398 (2004-07-01), Casagrande
patent: 6778451 (2004-08-01), Takahashi et al.
patent: 2003/0198110 (2003-10-01), Hasegawa et al.

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