Method and apparatus to determine erroneous value in memory cell

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371251, G01R 3128

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active

057612137

ABSTRACT:
A method and circuit are provided to detect if any bit stored in a given location in a memory is different from the data expected. The circuit includes logic to read each of the bits stored in the cells at given locations from memory and to generate a fail signal based on the data expected to be stored if the stored data is different from the expected data. The circuit also preferably includes logic to compare the True data and expect data read from each cell and generating the fail signal if they are the same. Additional logic circuitry is also preferably provided which determines if a node of the circuit remains in a precharged condition.

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"Testing Embedded Single and Multi-Port RAMs Using BIST and Boundary Scan," Alves, et al., IMAG/TIMA Laboratory publication, 1992 IEEE.

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