Data processing: generic control systems or specific application – Generic control system – apparatus or process – Optimization or adaptive control
Reissue Patent
2007-03-27
2007-03-27
Patel, Ramesh (Department: 2121)
Data processing: generic control systems or specific application
Generic control system, apparatus or process
Optimization or adaptive control
C700S030000, C700S031000, C700S034000, C700S047000, C700S052000, C700S121000, C702S081000, C702S085000, C702S104000, C703S006000, C703S022000, C438S005000, C438S014000
Reissue Patent
active
10302567
ABSTRACT:
A method and apparatus for calibrating a semi-empirical process simulator used to determine process values in a plasma process for creating a desired surface profile on a process substrate includes providing a test model which captures all mechanisms responsible for profile evolution in terms of a set of unknown surface parameters.delete-start id="DEL-S-00001" date="20070327" ?A setdelete-end id="DEL-S-00001" ?insert-start id="INS-S-00001" date="20070327" ?Setsinsert-end id="INS-S-00001" ?of testdelete-start id="DEL-S-00002" date="20070327" ?conditionsdelete-end id="DEL-S-00002" ?insert-start id="INS-S-00002" date="20070327" ?processesinsert-end id="INS-S-00002" ?delete-start id="DEL-S-00003" date="20070327" ?isdelete-end id="DEL-S-00003" ?insert-start id="INS-S-00003" date="20070327" ?areinsert-end id="INS-S-00003" ?derived for which the profile evolution is governed by only a limited number of parameters. For each set of testdelete-start id="DEL-S-00004" date="20070327" ?conditionsdelete-end id="DEL-S-00004" ?insert-start id="INS-S-00004" date="20070327" ?processinsert-end id="INS-S-00004" ?,insert-start id="INS-S-00005" date="20070327" ?modelinsert-end id="INS-S-00005" ?test values are selected anddelete-start id="DEL-S-00005" date="20070327" ?adelete-end id="DEL-S-00005" ?testdelete-start id="DEL-S-00006" date="20070327" ?substrate isdelete-end id="DEL-S-00006" ?insert-start id="INS-S-00006" date="20070327" ?substrates areinsert-end id="INS-S-00006" ?actually subjected todelete-start id="DEL-S-00007" date="20070327" ?adelete-end id="DEL-S-00007" ?insert-start id="INS-S-00007" date="20070327" ?theinsert-end id="INS-S-00007" ?testdelete-start id="DEL-S-00008" date="20070327" ?processdelete-end id="DEL-S-00008" ?insert-start id="INS-S-00008" date="20070327" ?processesinsert-end id="INS-S-00008" ?delete-start id="DEL-S-00009" date="20070327" ?defined by the test valuesdelete-end id="DEL-S-00009" ?, thereby creatingdelete-start id="DEL-S-00010" date="20070327" ?adelete-end id="DEL-S-00010" ?test surfacedelete-start id="DEL-S-00011" date="20070327" ?profiledelete-end id="DEL-S-00011" ?insert-start id="INS-S-00009" date="20070327" ?profilesinsert-end id="INS-S-00009" ?. The test values are used to generatedelete-start id="DEL-S-00012" date="20070327" ?andelete-end id="DEL-S-00012" ?approximate profiledelete-start id="DEL-S-00013" date="20070327" ?predictiondelete-end id="DEL-S-00013" ?insert-start id="INS-S-00010" date="20070327" ?predictionsinsert-end id="INS-S-00010" ?and are adjusted to minimize the discrepancy between the test surfacedelete-start id="DEL-S-00014" date="20070327" ?profiledelete-end id="DEL-S-00014" ?insert-start id="INS-S-00011" date="20070327" ?profilesinsert-end id="INS-S-00011" ?and the approximate profiledelete-start id="DEL-S-00015" date="20070327" ?predictiondelete-end id="DEL-S-00015" ?insert-start id="INS-S-00012" date="20070327" ?predictionsinsert-end id="INS-S-00012" ?, thereby providing a final model of the profile evolution in terms of the process values.
REFERENCES:
patent: 4663513 (1987-05-01), Webber
patent: 5107105 (1992-04-01), Isobe
patent: 5225740 (1993-07-01), Ohkawa
patent: 5270222 (1993-12-01), Moslehi
patent: 5290382 (1994-03-01), Zarowin et al.
patent: 5399229 (1995-03-01), Stefani et al.
patent: 5422139 (1995-06-01), Fischer
patent: 5642296 (1997-06-01), Saxena
patent: 5654903 (1997-08-01), Reitman et al.
patent: 5679599 (1997-10-01), Mehta
patent: 5711843 (1998-01-01), Jahns
patent: 5737496 (1998-04-01), Frye et al.
patent: 5819073 (1998-10-01), Nakamura
patent: 5861752 (1999-01-01), Klick
patent: 5866437 (1999-02-01), Chen et al.
patent: 5869402 (1999-02-01), Harafuji et al.
patent: 5871805 (1999-02-01), Lemelson
patent: 5900633 (1999-05-01), Solomon et al.
patent: 5933345 (1999-08-01), Martin et al.
patent: 5949678 (1999-09-01), Wold et al.
patent: 5963710 (1999-10-01), Masumoto
patent: 5966312 (1999-10-01), Chen
patent: 5966527 (1999-10-01), Krivokapic et al.
patent: 6041734 (2000-03-01), Raoux et al.
patent: 6110214 (2000-08-01), Klimasauskas
patent: 6136388 (2000-10-01), Raoux et al.
patent: 6151532 (2000-11-01), Barone et al.
patent: 6162709 (2000-12-01), Raoux et al.
patent: 6301510 (2001-10-01), Cooperberg et al.
patent: 6577915 (2003-06-01), Cooperberg et al.
patent: 6804572 (2004-10-01), Cooperberg et al.
patent: 6830650 (2004-12-01), Roche et al.
patent: 2004/0107906 (2004-06-01), Collins et al.
patent: 0 602 855 (1994-06-01), None
Bailey D. III et al., Scaling of Si and GaAs Trench Etch Rates with Aspect Ratio, Feature Width, and Substrate Temperature, J. Vac. Sci. Technol. B 13(1), Jan./Feb. 1995, pp. 92-104.
Barone et al., “Molecular Dynamics Simulations of Plasma-Surface Chemistry”, Plasma Sources Sci. Technol. 5, 1996, pp. 187-192.
Chang et al., “Plasma-Surface Kinetics and Feature Profile Evolution in Chlorine Etching of Polysilicon”, J. Vac. Sci. Technol. A 16(1), Jan./Feb. 1998, pp. 217-224.
Gottscho et al., “Microscopic Uniformity in Plasma Etching”, J. Vac. Sci. Technol. B 10(5), Sep./Oct. 1992, pp. 2133-2147.
Hamaguchi et al., “Liner Conformality in Ionized Magnetron Sputter Metal Deposition Processes”, J. Vac. Sci. Technol. B 14(4), Jul./Aug. 1996, pp. 2603-2608.
Hamaguchi, “Mathematical Methods for Thin Film Deposition Simulations”, Thin Films, vol. 22, pp. 81-115.
Han et al., “Profile Modeling of High Density Plasma Oxide Etching”, J. Vac. Sci. Technol. B 13(4) Jul./Aug. 1995, pp. 1893-1899.
Li et al., “Simulation and Experimental Analysis of Planarization of Refractory Metals Using A Multi-Step Sputter/Sputter Etch Process”, Journal of Electronic Materials, vol. 23, No. 11, 1994, pp. 1215-1220.
Liao et al., “Simulations of Metal Thin Film Thermal Flow Processes”, Vac. Sci. Technol. B 14(4), Jul./Aug. 1996, pp. 2615-2622.
Moyne et al., “Adaptive Extensions to a Multibranch Run-to-Run Controller for Plasma Etching”, J. Vac. Sci. Technol. A 13(3), May/Jun. 1995, pp. 1787-1791.
Rietman, “Neural Networks in Plasma Processing”, J. Vac. Sci. Technol. B 14(1), Jan./Feb. 1996, pp. 504-510.
Singh et al., “The Effect of Surface Transport on the Evolution of Film Microstructure in Plasma Etching and Deposition”, Elsevier Science, 1997, pp. 37-40.
Thallikar et al., “Experimental and Simulation Studies of Thermal Flow of Borophosphosilicate and Phosphosilicate Glasses”, J. Vac. Sci. Technol. B 13(4), Jul./Aug. 1995, pp. 1875-1878.
Vahedi et al., “Capacitive RF Discharges Modelled by Particle-in-Cell Monte Carlo Simulation I: Analysis of Numerical Techniques”, Plasma Sources Sci. Technol. , 1993, pp. 261-272.
Vahedi et al., “Capacitive RF Discharges Modelled by Particle-in-Cell Monte Carlo Simulation II: Comparisons with Laboratory Measurements of Electron Energy Distribution Functions”, 1993, Plasma Sources Sci. Technol. 2, pp. 273-278.
Cooperberg David
Gottscho Richard A.
Vahedi Vahid
Lam Research Corporation
Patel Ramesh
Ritchie David B.
Thelen Reid & Priest LLP
LandOfFree
Method and apparatus to calibrate a semi-empirical process... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus to calibrate a semi-empirical process..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus to calibrate a semi-empirical process... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3750870