Method and apparatus to calibrate a semi-empirical process...

Data processing: generic control systems or specific application – Generic control system – apparatus or process – Optimization or adaptive control

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C700S030000, C700S031000, C700S034000, C700S047000, C700S052000, C700S121000, C702S081000, C702S085000, C702S104000, C703S006000, C703S022000, C438S005000, C438S014000

Reissue Patent

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10302567

ABSTRACT:
A method and apparatus for calibrating a semi-empirical process simulator used to determine process values in a plasma process for creating a desired surface profile on a process substrate includes providing a test model which captures all mechanisms responsible for profile evolution in terms of a set of unknown surface parameters.delete-start id="DEL-S-00001" date="20070327" ?A setdelete-end id="DEL-S-00001" ?insert-start id="INS-S-00001" date="20070327" ?Setsinsert-end id="INS-S-00001" ?of testdelete-start id="DEL-S-00002" date="20070327" ?conditionsdelete-end id="DEL-S-00002" ?insert-start id="INS-S-00002" date="20070327" ?processesinsert-end id="INS-S-00002" ?delete-start id="DEL-S-00003" date="20070327" ?isdelete-end id="DEL-S-00003" ?insert-start id="INS-S-00003" date="20070327" ?areinsert-end id="INS-S-00003" ?derived for which the profile evolution is governed by only a limited number of parameters. For each set of testdelete-start id="DEL-S-00004" date="20070327" ?conditionsdelete-end id="DEL-S-00004" ?insert-start id="INS-S-00004" date="20070327" ?processinsert-end id="INS-S-00004" ?,insert-start id="INS-S-00005" date="20070327" ?modelinsert-end id="INS-S-00005" ?test values are selected anddelete-start id="DEL-S-00005" date="20070327" ?adelete-end id="DEL-S-00005" ?testdelete-start id="DEL-S-00006" date="20070327" ?substrate isdelete-end id="DEL-S-00006" ?insert-start id="INS-S-00006" date="20070327" ?substrates areinsert-end id="INS-S-00006" ?actually subjected todelete-start id="DEL-S-00007" date="20070327" ?adelete-end id="DEL-S-00007" ?insert-start id="INS-S-00007" date="20070327" ?theinsert-end id="INS-S-00007" ?testdelete-start id="DEL-S-00008" date="20070327" ?processdelete-end id="DEL-S-00008" ?insert-start id="INS-S-00008" date="20070327" ?processesinsert-end id="INS-S-00008" ?delete-start id="DEL-S-00009" date="20070327" ?defined by the test valuesdelete-end id="DEL-S-00009" ?, thereby creatingdelete-start id="DEL-S-00010" date="20070327" ?adelete-end id="DEL-S-00010" ?test surfacedelete-start id="DEL-S-00011" date="20070327" ?profiledelete-end id="DEL-S-00011" ?insert-start id="INS-S-00009" date="20070327" ?profilesinsert-end id="INS-S-00009" ?. The test values are used to generatedelete-start id="DEL-S-00012" date="20070327" ?andelete-end id="DEL-S-00012" ?approximate profiledelete-start id="DEL-S-00013" date="20070327" ?predictiondelete-end id="DEL-S-00013" ?insert-start id="INS-S-00010" date="20070327" ?predictionsinsert-end id="INS-S-00010" ?and are adjusted to minimize the discrepancy between the test surfacedelete-start id="DEL-S-00014" date="20070327" ?profiledelete-end id="DEL-S-00014" ?insert-start id="INS-S-00011" date="20070327" ?profilesinsert-end id="INS-S-00011" ?and the approximate profiledelete-start id="DEL-S-00015" date="20070327" ?predictiondelete-end id="DEL-S-00015" ?insert-start id="INS-S-00012" date="20070327" ?predictionsinsert-end id="INS-S-00012" ?, thereby providing a final model of the profile evolution in terms of the process values.

REFERENCES:
patent: 4663513 (1987-05-01), Webber
patent: 5107105 (1992-04-01), Isobe
patent: 5225740 (1993-07-01), Ohkawa
patent: 5270222 (1993-12-01), Moslehi
patent: 5290382 (1994-03-01), Zarowin et al.
patent: 5399229 (1995-03-01), Stefani et al.
patent: 5422139 (1995-06-01), Fischer
patent: 5642296 (1997-06-01), Saxena
patent: 5654903 (1997-08-01), Reitman et al.
patent: 5679599 (1997-10-01), Mehta
patent: 5711843 (1998-01-01), Jahns
patent: 5737496 (1998-04-01), Frye et al.
patent: 5819073 (1998-10-01), Nakamura
patent: 5861752 (1999-01-01), Klick
patent: 5866437 (1999-02-01), Chen et al.
patent: 5869402 (1999-02-01), Harafuji et al.
patent: 5871805 (1999-02-01), Lemelson
patent: 5900633 (1999-05-01), Solomon et al.
patent: 5933345 (1999-08-01), Martin et al.
patent: 5949678 (1999-09-01), Wold et al.
patent: 5963710 (1999-10-01), Masumoto
patent: 5966312 (1999-10-01), Chen
patent: 5966527 (1999-10-01), Krivokapic et al.
patent: 6041734 (2000-03-01), Raoux et al.
patent: 6110214 (2000-08-01), Klimasauskas
patent: 6136388 (2000-10-01), Raoux et al.
patent: 6151532 (2000-11-01), Barone et al.
patent: 6162709 (2000-12-01), Raoux et al.
patent: 6301510 (2001-10-01), Cooperberg et al.
patent: 6577915 (2003-06-01), Cooperberg et al.
patent: 6804572 (2004-10-01), Cooperberg et al.
patent: 6830650 (2004-12-01), Roche et al.
patent: 2004/0107906 (2004-06-01), Collins et al.
patent: 0 602 855 (1994-06-01), None
Bailey D. III et al., Scaling of Si and GaAs Trench Etch Rates with Aspect Ratio, Feature Width, and Substrate Temperature, J. Vac. Sci. Technol. B 13(1), Jan./Feb. 1995, pp. 92-104.
Barone et al., “Molecular Dynamics Simulations of Plasma-Surface Chemistry”, Plasma Sources Sci. Technol. 5, 1996, pp. 187-192.
Chang et al., “Plasma-Surface Kinetics and Feature Profile Evolution in Chlorine Etching of Polysilicon”, J. Vac. Sci. Technol. A 16(1), Jan./Feb. 1998, pp. 217-224.
Gottscho et al., “Microscopic Uniformity in Plasma Etching”, J. Vac. Sci. Technol. B 10(5), Sep./Oct. 1992, pp. 2133-2147.
Hamaguchi et al., “Liner Conformality in Ionized Magnetron Sputter Metal Deposition Processes”, J. Vac. Sci. Technol. B 14(4), Jul./Aug. 1996, pp. 2603-2608.
Hamaguchi, “Mathematical Methods for Thin Film Deposition Simulations”, Thin Films, vol. 22, pp. 81-115.
Han et al., “Profile Modeling of High Density Plasma Oxide Etching”, J. Vac. Sci. Technol. B 13(4) Jul./Aug. 1995, pp. 1893-1899.
Li et al., “Simulation and Experimental Analysis of Planarization of Refractory Metals Using A Multi-Step Sputter/Sputter Etch Process”, Journal of Electronic Materials, vol. 23, No. 11, 1994, pp. 1215-1220.
Liao et al., “Simulations of Metal Thin Film Thermal Flow Processes”, Vac. Sci. Technol. B 14(4), Jul./Aug. 1996, pp. 2615-2622.
Moyne et al., “Adaptive Extensions to a Multibranch Run-to-Run Controller for Plasma Etching”, J. Vac. Sci. Technol. A 13(3), May/Jun. 1995, pp. 1787-1791.
Rietman, “Neural Networks in Plasma Processing”, J. Vac. Sci. Technol. B 14(1), Jan./Feb. 1996, pp. 504-510.
Singh et al., “The Effect of Surface Transport on the Evolution of Film Microstructure in Plasma Etching and Deposition”, Elsevier Science, 1997, pp. 37-40.
Thallikar et al., “Experimental and Simulation Studies of Thermal Flow of Borophosphosilicate and Phosphosilicate Glasses”, J. Vac. Sci. Technol. B 13(4), Jul./Aug. 1995, pp. 1875-1878.
Vahedi et al., “Capacitive RF Discharges Modelled by Particle-in-Cell Monte Carlo Simulation I: Analysis of Numerical Techniques”, Plasma Sources Sci. Technol. , 1993, pp. 261-272.
Vahedi et al., “Capacitive RF Discharges Modelled by Particle-in-Cell Monte Carlo Simulation II: Comparisons with Laboratory Measurements of Electron Energy Distribution Functions”, 1993, Plasma Sources Sci. Technol. 2, pp. 273-278.

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