Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-12
2008-12-23
Ngo, Ngan V (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S234000, C257S236000, C257S238000, C257S239000, C257S291000
Reexamination Certificate
active
07468532
ABSTRACT:
An imaging device having a pixel array in which one plate of a storage capacitor is coupled to a storage node while another plate is formed by an electrode of a photo-conversion region.
REFERENCES:
patent: 4388532 (1983-06-01), Garcia
patent: 5955753 (1999-09-01), Takahashi
patent: 5962844 (1999-10-01), Merrill et al.
patent: 6107655 (2000-08-01), Guidash
patent: 6160281 (2000-12-01), Guidash
patent: 6198086 (2001-03-01), Schanz et al.
patent: 6204524 (2001-03-01), Rhodes
patent: 6218656 (2001-04-01), Guidash
patent: 6352869 (2002-03-01), Guidash
patent: 6423994 (2002-07-01), Guidash
patent: 6552323 (2003-04-01), Guidash et al.
patent: 6587146 (2003-07-01), Guidash
patent: 6624850 (2003-09-01), Guidash
patent: 6657665 (2003-12-01), Guidash
patent: 6947088 (2005-09-01), Kochi
patent: 2004/0251394 (2004-12-01), Rhodes et al.
patent: 2005/0167574 (2005-08-01), He
patent: 567716 (2003-12-01), None
Aptina Imaging Corporation
Dickstein & Shapiro LLP
Liu Benjamin Tzu-Hung
Ngo Ngan V
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