Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-11-13
2007-11-13
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S148000, C365S149000
Reexamination Certificate
active
11298614
ABSTRACT:
A circuit and method for writing to a variable resistance memory cell. The circuit includes a variable resistance memory cell, a switchable current blocking device and a charge storing element. As the switchable current blocking device blocks current flow through the variable resistance memory cell, the charge storing element charges. When the switchable current blocking device is not blocking current, the charge storing element discharges through the variable resistance memory cell, generating a write current sufficient to write high resistance variable resistance memory cells.
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Dickstein & Shapiro LLP
Lam David
Micro)n Technology, Inc.
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