Method and apparatus processing variable resistance memory...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S148000, C365S149000

Reexamination Certificate

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11298614

ABSTRACT:
A circuit and method for writing to a variable resistance memory cell. The circuit includes a variable resistance memory cell, a switchable current blocking device and a charge storing element. As the switchable current blocking device blocks current flow through the variable resistance memory cell, the charge storing element charges. When the switchable current blocking device is not blocking current, the charge storing element discharges through the variable resistance memory cell, generating a write current sufficient to write high resistance variable resistance memory cells.

REFERENCES:
patent: 5541869 (1996-07-01), Rose et al.
patent: 6072716 (2000-06-01), Jacobson et al.
patent: 6462982 (2002-10-01), Numata et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 2003/0045054 (2003-03-01), Campbell et al.
patent: 2003/0047765 (2003-03-01), Campbell

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