Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2005-11-01
2005-11-01
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S627000, C257S521000, C257S527000
Reexamination Certificate
active
06960821
ABSTRACT:
Improved methods and structures are provided that are lateral to surfaces with a (110) crystal plane orientation such that an electrical current of such structures is conducted in the <110> direction. Advantageously, improvements in hole carrier mobility of approximately 50% can be obtained by orienting the structure's channel in a (110) plane such that the electrical current flow is in the <110> direction. Moreover, these improved methods and structures can be used in conjunction with existing fabrication and processing techniques with minimal or no added complexity.
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Forbes Leonard
Noble Wendell P.
Reinberg Alan R.
Dickey Thomas L
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
Tran Minhloan
LandOfFree
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