Method and apparatus of stress relief in semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S637000, C257S640000, C257SE23145, C257SE23167

Reexamination Certificate

active

10439874

ABSTRACT:
A method, apparatus and system are provided for relieving stress in the via structures of semiconductor structures whenever a linewidth below a via is larger than a ground-rule, including providing a via at least as large as the groundrule, providing a landing pad above the via, providing a via bar in place of a via, slotting the metal linewidth below the via, or providing an oversize via with a sidewall spacer.

REFERENCES:
patent: 6486059 (2002-11-01), Lee et al.
patent: 6638849 (2003-10-01), Ting et al.
patent: 6972209 (2005-12-01), Agarwala et al.
patent: 2003/0042580 (2003-03-01), Hoinkis et al.
patent: 2003/0214041 (2003-11-01), Suzuki et al.
patent: 2004/0087135 (2004-05-01), Canaperi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus of stress relief in semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus of stress relief in semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus of stress relief in semiconductor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3934834

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.