Method and apparatus of local word-line redundancy in CAM

Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition

Reexamination Certificate

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C714S711000, C714S718000, C365S049130, C365S052000, C365S200000, C365S230060, C711S108000

Reexamination Certificate

active

06920525

ABSTRACT:
A local word-line redundancy architecture and method that implements both word-line and match-line steering for semiconductor memories and more particularly for content-addressable memories (CAM) are introduced. According to the present invention, the method of performing local word-line redundancy comprising: testing by using BIST, storing results, comparing failing read address data and failing match-line address data to determine if redundancy is possible and, if so, storing the redundancy repair data pattern and loading that patten upon initialization so that redundancy steering is activated.

REFERENCES:
patent: 6137707 (2000-10-01), Srinivasan et al.
patent: 6275406 (2001-08-01), Gibson et al.
patent: 6286116 (2001-09-01), Bhavsar
patent: 6728123 (2004-04-01), Batson et al.

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