Method and apparatus of forming a thin film

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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Details

20419212, 20419216, 20419217, 20419218, 20419226, 20429807, C23C 1434

Patent

active

057923248

ABSTRACT:
A method of forming a thin film using a sputtering apparatus having a chamber, includes the steps of providing a target and a wafer in the chamber, and providing an inert gas to form atomized target material, a reactive etching gas for reacting with the target to form a molecular by-product, and a reactive sputter gas for reacting with the atomized target material and the molecular by-product to form a thin film on the wafer.

REFERENCES:
patent: 5415756 (1995-05-01), Wolfe et al.
patent: 5614070 (1997-03-01), Moon

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