Method and apparatus of etching a clean trench in a semiconducto

Details Method and apparatus of etching a clean trench in a semiconducto Method and apparatus of etching a clean trench in a semiconducto

1994-03-09

1996-04-30

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566431, 1566621, 1566531, 216 67, H01L 2100

Patent

active

055121306

ABSTRACT:
An etching apparatus (10) includes a process chamber (12) partially surrounded by an upper electrode (14) and a lower electrode (16). A semiconductor material (18) lies within the process chamber (12) and in contact with the lower electrode (16). The lower electrode (16) is connected to a first power supply (22) operating at a substantially high frequency and is also connected to a second power supply (24) operating at a relatively low frequency. The lower frequency of the second power supply (24) provides a degree of anisotropic control to the trench etching process performed on the semiconductor material (18). The added anisotropic control allows for the elimination of sidewall deposition enhancing materials within a plasma chemistry introduced into the process chamber (12) by a gas distributor (20). Without the requirement of a sidewall deposition enhancing material during trench etching of the semiconductor material (18), buildup of residue due to sidewall deposition does not occur within process chamber (12).

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patent: B14464223 (1991-04-01), Gorin
Mark Stark and Leslie Giffen, "Silicon Trench Etching in the 1500", Tegal Process Review, vol. I, No. 1, May 1984, pp. 8-9.
Stephen P. DeOrnellas and Joseph D. Ocampo, "The Etching of Silicon in a Multi-Frequency Discharge Reactor", Lam Research Corporation, 47531 Warm Springs Blvd., Fremont, Calif. 94539.
J. Keller, L. Giffen, D. Uchimura, G. Corn, "A Dual Frequency Tri-Electrode System for Etching Polysilicon", Mat. Res. Soc. Symp. Proc., vol. 38, 1985 Materials Research Society, pp. 243-246.

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