Method and apparatus for zone recrystallization

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156DIG88, 156DIG91, 15662071, C30B 1108, C30B 1114

Patent

active

047494387

ABSTRACT:
A method and apparatus for producing crystalline ribbons by zone melting. Means for coupling electromagnetic energy into a film of material are provided to appropriately induce electrical currents in order to control and restrict the molten zone and suppress net loss of the heat of fusion from the balance of the ribbon in contact with the melt, thus controlling the thickness uniformity of the resulting ribbon. The heat of crystallization is selectively removed by a heat absorbing means from one end of the melt zone in a direction substantially perpendicular to the direction of pulling.

REFERENCES:
patent: 2415025 (1947-01-01), Grell et al.
patent: 3378409 (1968-04-01), Hurle et al.
patent: 3681033 (1972-08-01), Bleil
patent: 3759671 (1973-09-01), Bleil
patent: 4226834 (1980-10-01), Shudo et al.
patent: 4264407 (1981-04-01), Shudo et al.
patent: 4316764 (1982-02-01), Kudo et al.
patent: 4325777 (1982-04-01), Yarwood et al.
patent: 4417944 (1983-11-01), Jewett
patent: 4563976 (1986-01-01), Foell et al.
Okamoto et al., "Current-Assisted Laser Annealing of Polysilicon Films," Applied Physics Letters, vol. 42, pp. 809-811, 1 May 1983.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for zone recrystallization does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for zone recrystallization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for zone recrystallization will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-842933

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.