Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-01
2005-02-01
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S754000, C257S757000, C257S901000
Reexamination Certificate
active
06849909
ABSTRACT:
A method and apparatus for providing a weak inversion mode metal-oxide-semiconductor (MOS) decoupling capacitor is described. In one embodiment, an enhancement-mode p-channel MOS (PMOS) transistor is constructed with a gate material whose work function differs from that commonly used. In one exemplary embodiment, platinum silicate (PtSi) is used. In alternate embodiments, the threshold voltage of the PMOS transistor may be changed by modifying the dopant levels of the substrate. In either embodiment the flat band magnitude of the transistor is shifted by the change in materials used to construct the transistor. When such a transistor is connected with the gate lead connected to the positive supply voltage and the other leads connected to the negative (ground) supply voltage, an improved decoupling capacitor results.
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De Vivek K.
Karnik Tanay
Nair Rajendran
Narendra Siva G.
Nicholls Dennis A.
Pham Long
Rao Shrinivas H
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