Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2011-01-04
2011-01-04
Clark, Jasmine J (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S777000, C257SE25006, C257SE25013, C257SE25018, C257SE25021, C257SE25027, C257SE23085, C257S698000, C438S108000
Reexamination Certificate
active
07863721
ABSTRACT:
A semiconductor device has first and second wafers having bond pads. The bond pad of the second wafer is connected to the bond pad of the first wafer using a conductive adhesive. A first interconnect structure is formed within the second wafer and includes a first via formed in a back surface of the second wafer to expose the bond pad of the second wafer. A first metal layer is formed conformally over the first via and is in electrical contact with the bond pad of the second wafer. A third wafer is mounted over the second wafer by connecting a bond pad formed over a front surface of the third wafer to the first metal layer. A second interconnect structure is formed over a backside of the third wafer opposite the front surface. The second interconnect structure is electrically connected to the first metal layer.
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Marimuthu Pandi Chelvam
Suthiwongsunthorn Nathapong
Atkins Robert D.
Clark Jasmine J
STATS ChipPAC Ltd.
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