Method and apparatus for vapor deposition

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156610, 156613, 422108, 422245, 118665, 118688, 118691, C30B 2516

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active

052000214

ABSTRACT:
A method for vapor deposition includes monitoring of growth of a semiconductor layer by way of in-situ monitoring. According to the invention, in-situ monitoring is performed by irradiating a light beam onto the surface of the growing layer in a direction nearly perpendicular to the surface. Growth parameters of the layer are detected by monitoring variation of the light reflected by the surface of the layer. A growth condition in a vapor deposition chamber is feedback controlled based on the detected growth parameter.

REFERENCES:
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patent: 3892490 (1975-07-01), Uetsuki et al.
patent: 4024291 (1977-05-01), Wilmanns
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patent: 4525376 (1985-06-01), Edgerton
patent: 4582431 (1986-04-01), Cole
patent: 4931132 (1990-06-01), Aspnes et al.
Patent Abstract of Japan vol. 2, No. 100 referring to JP 53-65,276.
F., Hottier, et al., "In situ monitoring by elliposometry of metalorganic epitaxy or GaAlAs-GaAs superiattice", J. Appl. Phys. 51(3), Mar. 1980.
Esaki et al., IBM Technical Disclosure Bulletin, vol. 13, No. 12, May 1971, pp. 3698-3699.
Kutko, R. "Ellipsometry for Semiconductor Process Control", Solid State Tech., Feb. 1978 pp. 43-44, 47.

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