Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2009-10-12
2010-12-28
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S210130, C365S226000
Reexamination Certificate
active
07859918
ABSTRACT:
A method and apparatus is provided for the implementation of a measurement and adjustment mechanism within a semiconductor die that facilitates adjustment of the magnitude of voltage generated by one or more voltage reference generation circuits on the die. In a first embodiment, the output voltage magnitude of a bandgap reference circuit may be measured and adjusted. In a second embodiment, the output voltage magnitude of a voltage regulator circuit may be measured and adjusted. Programmable circuit elements, such as programmable resistors, may first be programmed during a configuration event of the die to determine the optimal configuration settings of the one or more voltage reference generation circuits. The optimal configuration settings are then used to program the state of one or more eFuses to maintain the optimal configuration settings for the duration of the semiconductor die's lifetime.
REFERENCES:
patent: 6917188 (2005-07-01), Kernahan
patent: 6943617 (2005-09-01), Tran et al.
patent: 7751783 (2010-07-01), Ouzillou et al.
Nguyen Leon L.
Voogel Martin L.
Dinh Son
Wallace Michael T.
Xilinx , Inc.
LandOfFree
Method and apparatus for trimming die-to-die variation of an... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for trimming die-to-die variation of an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for trimming die-to-die variation of an... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4210106