Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2006-05-09
2006-05-09
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S308000, C438S799000, C250S492200, C250S492220
Reexamination Certificate
active
07041610
ABSTRACT:
In order to achieve temperature distribution, in particular a homogeneous temperature distribution in, for example, a substrate during a thermal treatment process of said substrate, a method is disclosed for the thermal treatment of substrates, in particular semi-conductor wafers, in a process chamber comprising at least one temperature distribution influencing element located in the process chamber. During thermal treatment, the spatial arrangement of the element is altered relative to the substrate and/or to the process chamber. A device for the thermal treatment of substrates in a process chamber is also disclosed, comprising at least one temperature distribution influencing element located in a process chamber wherein a device is provided in order to alter the spatial arrangement of the element relative to the substrate and/or to the process chamber during the thermal treatment process.
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Kreiser Uwe
Tillmann Andreas
Becker R. W.
Perkins Pamela
R W Becker & Associates
Steag RTP Systems GmbH
Zarabian Amir
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