Method and apparatus for the plasma etching, substrate cleaning,

Details Method and apparatus for the plasma etching, substrate cleaning, Method and apparatus for the plasma etching, substrate cleaning,

1990-08-13

1991-08-13

Bueker, Richard

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 118723, 427 39, 20419232, 20429806, 20429814, 20429831, 20429833, 20429834, 20429839, H01L 2100

Patent

active

050393766

ABSTRACT:
The invention provides new methods and apparatus for the deposition of materials on substrates by the use of a D.C. glow discharge, sometimes also called a plasma discharge. A precursor gas (or gases) is introduced at low pressure (10-500 milliTor) into an enclosure containing two spaced parallel cathode electrodes and an intermediate parallel anode electrode, preferably midway between the two cathodes, which anode electrode is permeable to at least electrons of the glow or plasma discharge. Upon application of a suitable positive potential to the anode a deposition plasma is generated in the space on both sides of the anode. The plasma of charged and neutral radicals moves to the cathodes both by charge attraction and by diffusion, facilitated by gas flow toward the cathodes, giving high quality films at increased deposition rates, higher possible discharge current densities, lower gas pressures with consequent gas economy and safety, improved film adhesion, and greater independence of these parameters from one another than has been possible with the prior art processes. To avoid encroachment of the plasma on the cathodes and substrates supplementary ion permeable cathode electrodes may be interposed between the first-mentioned cathodes and the anode close to the former.

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patent: 4735633 (1988-04-01), Chiu
patent: 4950376 (1990-08-01), Hayashi et al.

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