Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
2005-02-22
2005-02-22
Versteeg, Steven (Department: 1753)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C118S7230MP, C118S7230AN, C118S7230ME, C118S7230MR, C118S7230MA, C118S7230ER
Reexamination Certificate
active
06858120
ABSTRACT:
The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.
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U.S. Appl. No. 09/383,726.
Ahn Kie Y.
Forbes Leonard
Knobbe Martens Olson & Bear LLP
Versteeg Steven
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