Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2006-04-18
2006-04-18
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C438S010000, C438S011000, C438S018000
Reexamination Certificate
active
07029934
ABSTRACT:
A testing method for a TFT array substrate using a self-emitting element drive where pixels are arranged in a matrix and each pixel comprises a drive transistor having a gate formed from a first structural material and a source and a drain formed from a second structural material, and a hold capacitor having a first electrode formed from the first structural material and a second electrode formed from the second structural material, where the testing method comprises a first step for applying a first voltage to the hold capacitor; a second step for applying a second voltage to the hold capacitor after the first step; a third step for measuring the charge in the pixel after applying the second voltage; and a fourth step for calculating the capacitance of the hold capacitor from the charge and the potential difference between the first voltage and the second voltage.
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Chikamatsu Kiyoshi
Tajima Kayoko
Agilent Technologie,s Inc.
Picardat Kevin M.
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