Method and apparatus for testing a memory device with a...

Static information storage and retrieval – Read/write circuit – Testing

Reexamination Certificate

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C365S200000, C365S185090, C714S718000

Reexamination Certificate

active

07626874

ABSTRACT:
A test methodology for testing a memory device with a RSR feature is disclosed. For example, a method for testing a memory device having at least one memory cell group, at least one redundant memory cell group, and a defect detect register is disclosed. In one embodiment, the method applies at least one memory test to the at least one memory cell group; and applies a defect detect register test to the defect detect register.

REFERENCES:
patent: 6452845 (2002-09-01), Merritt
patent: 6590816 (2003-07-01), Perner
patent: 7486111 (2009-02-01), Madurawe

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