Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-08-22
2006-08-22
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S715000, C438S716000, C438S743000
Reexamination Certificate
active
07094703
ABSTRACT:
The present invention provides method and apparatus for surface treatment which, when employed in process steps of manufacturing semiconductor devices, can result in the final products having enhanced reliability. According to the surface processing method, an object to be processed W is introduced in a processing vessel10, which is then supplied with ClF3gas serving as cleaning gas from a supply unit26. The ClF3gas is bound to the surface of the object to be processed W, and although the supply of the gas to the processing vessel is interrupted, the ClF3gas bound to the surface of the object to be processed W serves to clean the surface of the object to be processed. Next, reducing gas is introduced into the processing vessel W to remove chlorine from the object to be processed W, the chlorine being derived from the ClF3gas. After that, the introduction of the reducing gas is interrupted, and the cleaned object to be processed W is exported from the processing vessel10. In addition to that, a surface processing apparatus1and other processing devices are arranged in a cluster device so that an object to be processed therein is transported among them from one to another under a vacuum environment.
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Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Norton Nadine G.
Tokyo Electron Limited
Tran Binh X.
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